Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
30V
Pakuotės tipas
TO-252
Serija
STripFET
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40W
Typical Gate Charge Qg @ Vgs
12nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.1V
Maksimali darbinė temperatūra
175°C
Aukštis
2.4mm
Ilgis
6.6mm
Standards/Approvals
No
Plotis
6.2mm
Automotive Standard
No
Produkto Aprašymas
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Sandėlio informacija laikinai nepasiekiama.
€ 10,50
€ 1,05 Each (In a Pack of 10) (be PVM)
€ 12,70
€ 1,27 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 10,50
€ 1,05 Each (In a Pack of 10) (be PVM)
€ 12,70
€ 1,27 Each (In a Pack of 10) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
10
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 90 | € 1,05 | € 10,50 |
| 100 - 490 | € 0,693 | € 6,93 |
| 500 - 990 | € 0,547 | € 5,47 |
| 1000+ | € 0,524 | € 5,24 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
30V
Pakuotės tipas
TO-252
Serija
STripFET
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40W
Typical Gate Charge Qg @ Vgs
12nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.1V
Maksimali darbinė temperatūra
175°C
Aukštis
2.4mm
Ilgis
6.6mm
Standards/Approvals
No
Plotis
6.2mm
Automotive Standard
No
Produkto Aprašymas
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
