STMicroelectronics STripFET P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Serija
STripFET
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
6.2mm
Ilgis
6.6mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Aukštis
2.4mm
Kilmės šalis
China
Produkto aprašymas
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 1 417,88
€ 0,567 Each (On a Reel of 2500) (be PVM)
€ 1 715,63
€ 0,686 Each (On a Reel of 2500) (su PVM)
2500
€ 1 417,88
€ 0,567 Each (On a Reel of 2500) (be PVM)
€ 1 715,63
€ 0,686 Each (On a Reel of 2500) (su PVM)
2500
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Serija
STripFET
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
6.2mm
Ilgis
6.6mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Aukštis
2.4mm
Kilmės šalis
China
Produkto aprašymas
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products