Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
710V
Serija
MDmesh M5
Pakuotės tipas
TO-252
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
110W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maksimali darbinė temperatūra
150°C
Standards/Approvals
No
Plotis
6.2mm
Aukštis
2.4mm
Ilgis
6.6mm
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
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€ 78,75
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 95,29
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
25
€ 78,75
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 95,29
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Ritė)
25
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
710V
Serija
MDmesh M5
Pakuotės tipas
TO-252
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
110W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maksimali darbinė temperatūra
150°C
Standards/Approvals
No
Plotis
6.2mm
Aukštis
2.4mm
Ilgis
6.6mm
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
