Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Pakuotės tipas
TO-252
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
338mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
15.3nC
Maksimali darbinė temperatūra
150°C
Standards/Approvals
No
Plotis
6.2mm
Aukštis
2.4mm
Ilgis
6.6mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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€ 3 125,00
€ 1,25 Each (On a Reel of 2500) (be PVM)
€ 3 781,25
€ 1,512 Each (On a Reel of 2500) (su PVM)
2500
€ 3 125,00
€ 1,25 Each (On a Reel of 2500) (be PVM)
€ 3 781,25
€ 1,512 Each (On a Reel of 2500) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Pakuotės tipas
TO-252
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
338mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
15.3nC
Maksimali darbinė temperatūra
150°C
Standards/Approvals
No
Plotis
6.2mm
Aukštis
2.4mm
Ilgis
6.6mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
