Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Serija
MDmesh II
Pakuotės tipas
TO-252
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.36Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
27nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
150°C
Ilgis
10.1mm
Standards/Approvals
RoHS
Plotis
6.6mm
Aukštis
2.4mm
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Sandėlio informacija laikinai nepasiekiama.
€ 2 442,50
€ 0,977 Each (On a Reel of 2500) (be PVM)
€ 2 955,42
€ 1,182 Each (On a Reel of 2500) (su PVM)
2500

€ 2 442,50
€ 0,977 Each (On a Reel of 2500) (be PVM)
€ 2 955,42
€ 1,182 Each (On a Reel of 2500) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
2500

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Serija
MDmesh II
Pakuotės tipas
TO-252
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.36Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
27nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
150°C
Ilgis
10.1mm
Standards/Approvals
RoHS
Plotis
6.6mm
Aukštis
2.4mm
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.