Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
TO-252
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
680mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
85W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Maksimali darbinė temperatūra
150°C
Standards/Approvals
No
Ilgis
6.6mm
Aukštis
2.17mm
Automotive Standard
No
Produkto Aprašymas
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Sandėlio informacija laikinai nepasiekiama.
€ 2 500,00
€ 1,00 Each (On a Reel of 2500) (be PVM)
€ 3 025,00
€ 1,21 Each (On a Reel of 2500) (su PVM)
2500

€ 2 500,00
€ 1,00 Each (On a Reel of 2500) (be PVM)
€ 3 025,00
€ 1,21 Each (On a Reel of 2500) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
2500

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
TO-252
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
680mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
85W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Maksimali darbinė temperatūra
150°C
Standards/Approvals
No
Ilgis
6.6mm
Aukštis
2.17mm
Automotive Standard
No
Produkto Aprašymas
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.