STMicroelectronics N-Channel MOSFET, 40 A, 200 V, 3-Pin D2PAK STB40NF20

RS kodas: 168-8030Gamintojas: STMicroelectronicsGamintojo kodas: STB40NF20
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

200 V

Serija

STripFET

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

9.35mm

Ilgis

10.4mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

4.6mm

Kilmės šalis

China

Produkto aprašymas

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Sandėlio informacija laikinai nepasiekiama.

€ 3 230,00

€ 3,23 Each (On a Reel of 1000) (be PVM)

€ 3 908,30

€ 3,908 Each (On a Reel of 1000) (su PVM)

STMicroelectronics N-Channel MOSFET, 40 A, 200 V, 3-Pin D2PAK STB40NF20
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€ 3 230,00

€ 3,23 Each (On a Reel of 1000) (be PVM)

€ 3 908,30

€ 3,908 Each (On a Reel of 1000) (su PVM)

STMicroelectronics N-Channel MOSFET, 40 A, 200 V, 3-Pin D2PAK STB40NF20
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

200 V

Serija

STripFET

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

9.35mm

Ilgis

10.4mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

4.6mm

Kilmės šalis

China

Produkto aprašymas

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more