Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
600V
Pakuotės tipas
TO-263
Serija
ST
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.115Ω
Channel Mode
Depletion
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Power Dissipation Pd
190W
Forward Voltage Vf
1.6V
Maksimali darbinė temperatūra
150°C
Ilgis
10.4mm
Standards/Approvals
No
Aukštis
15.85mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
Sandėlio informacija laikinai nepasiekiama.
€ 3 950,00
€ 3,95 Each (On a Reel of 1000) (be PVM)
€ 4 779,50
€ 4,78 Each (On a Reel of 1000) (su PVM)
1000

€ 3 950,00
€ 3,95 Each (On a Reel of 1000) (be PVM)
€ 4 779,50
€ 4,78 Each (On a Reel of 1000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1000

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
600V
Pakuotės tipas
TO-263
Serija
ST
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.115Ω
Channel Mode
Depletion
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Power Dissipation Pd
190W
Forward Voltage Vf
1.6V
Maksimali darbinė temperatūra
150°C
Ilgis
10.4mm
Standards/Approvals
No
Aukštis
15.85mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.