Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Pakuotės tipas
TO-263
Serija
STB11NM80
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimali darbinė temperatūra
-65°C
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
0.86V
Maksimali darbinė temperatūra
150°C
Aukštis
4.37mm
Ilgis
10.4mm
Standards/Approvals
No
Plotis
9.35mm
Automotive Standard
No
Produkto Aprašymas
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
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€ 4 550,00
€ 4,55 Each (On a Reel of 1000) (be PVM)
€ 5 505,50
€ 5,506 Each (On a Reel of 1000) (su PVM)
1000
€ 4 550,00
€ 4,55 Each (On a Reel of 1000) (be PVM)
€ 5 505,50
€ 5,506 Each (On a Reel of 1000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Pakuotės tipas
TO-263
Serija
STB11NM80
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimali darbinė temperatūra
-65°C
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
0.86V
Maksimali darbinė temperatūra
150°C
Aukštis
4.37mm
Ilgis
10.4mm
Standards/Approvals
No
Plotis
9.35mm
Automotive Standard
No
Produkto Aprašymas
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
