Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
Hip-247
Serija
SCT
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.09Ω
Channel Mode
Depletion
Produkto Aprašymas
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
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Sandėlio informacija laikinai nepasiekiama.
€ 30,80
€ 30,80 už 1 vnt. (be PVM)
€ 37,27
€ 37,27 už 1 vnt. (su PVM)
Standartas
1
€ 30,80
€ 30,80 už 1 vnt. (be PVM)
€ 37,27
€ 37,27 už 1 vnt. (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
1
| kiekis | Vieneto kaina |
|---|---|
| 1 - 4 | € 30,80 |
| 5 - 9 | € 26,50 |
| 10+ | € 25,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
Hip-247
Serija
SCT
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.09Ω
Channel Mode
Depletion
Produkto Aprašymas
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
