Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
Hip-247
Serija
SCT
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
94nC
Maximum Power Dissipation Pd
389W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
3V
Maksimali darbinė temperatūra
200°C
Ilgis
34.8mm
Aukštis
5mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
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€ 29,40
€ 29,40 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 35,57
€ 35,57 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
1
€ 29,40
€ 29,40 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 35,57
€ 35,57 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Vamzdelis)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
Hip-247
Serija
SCT
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
94nC
Maximum Power Dissipation Pd
389W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
3V
Maksimali darbinė temperatūra
200°C
Ilgis
34.8mm
Aukštis
5mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
