Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
Hip-247
Serija
SCTW40N
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
700mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
278W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Maksimali darbinė temperatūra
175°C
Aukštis
20.15mm
Ilgis
15.75mm
Standards/Approvals
No
Plotis
5.15mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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€ 537,00
€ 17,90 Each (In a Tube of 30) (be PVM)
€ 649,77
€ 21,659 Each (In a Tube of 30) (su PVM)
30
€ 537,00
€ 17,90 Each (In a Tube of 30) (be PVM)
€ 649,77
€ 21,659 Each (In a Tube of 30) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
Hip-247
Serija
SCTW40N
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
700mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
278W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Maksimali darbinė temperatūra
175°C
Aukštis
20.15mm
Ilgis
15.75mm
Standards/Approvals
No
Plotis
5.15mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
