Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
PowerFLAT
Serija
SCTL35N65G2V
Mount Type
Surface
Kaiščių skaičius
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
3.3V
Maksimali darbinė temperatūra
175°C
Ilgis
8.1mm
Aukštis
0.95mm
Standards/Approvals
No
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Sandėlio informacija laikinai nepasiekiama.
€ 49 500,00
€ 16,50 Each (On a Reel of 3000) (be PVM)
€ 59 895,00
€ 19,965 Each (On a Reel of 3000) (su PVM)
3000

€ 49 500,00
€ 16,50 Each (On a Reel of 3000) (be PVM)
€ 59 895,00
€ 19,965 Each (On a Reel of 3000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
3000

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
PowerFLAT
Serija
SCTL35N65G2V
Mount Type
Surface
Kaiščių skaičius
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
3.3V
Maksimali darbinė temperatūra
175°C
Ilgis
8.1mm
Aukštis
0.95mm
Standards/Approvals
No
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.