Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
H2PAK
Serija
SCTH90
Mount Type
Surface
Kaiščių skaičius
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Gate Source Voltage Vgs
22V
Maksimali darbinė temperatūra
175°C
Aukštis
10.4mm
Ilgis
15.25mm
Standards/Approvals
No
Plotis
4.8mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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€ 30 000,00
€ 30,00 Each (On a Reel of 1000) (be PVM)
€ 36 300,00
€ 36,30 Each (On a Reel of 1000) (su PVM)
1000
€ 30 000,00
€ 30,00 Each (On a Reel of 1000) (be PVM)
€ 36 300,00
€ 36,30 Each (On a Reel of 1000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
H2PAK
Serija
SCTH90
Mount Type
Surface
Kaiščių skaičius
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Gate Source Voltage Vgs
22V
Maksimali darbinė temperatūra
175°C
Aukštis
10.4mm
Ilgis
15.25mm
Standards/Approvals
No
Plotis
4.8mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
