Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
H2PAK-7
Serija
SCT
Mount Type
Surface
Kaiščių skaičius
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Produkto Aprašymas
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Sandėlio informacija laikinai nepasiekiama.
€ 20 100,00
€ 20,10 Each (On a Reel of 1000) (be PVM)
€ 24 321,00
€ 24,321 Each (On a Reel of 1000) (su PVM)
1000
€ 20 100,00
€ 20,10 Each (On a Reel of 1000) (be PVM)
€ 24 321,00
€ 24,321 Each (On a Reel of 1000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
H2PAK-7
Serija
SCT
Mount Type
Surface
Kaiščių skaičius
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Produkto Aprašymas
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
