Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
H2PAK-7
Serija
SCT
Mount Type
Surface
Kaiščių skaičius
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Produkto Aprašymas
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
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Sandėlio informacija laikinai nepasiekiama.
€ 45,20
€ 45,20 už 1 vnt. (be PVM)
€ 54,69
€ 54,69 už 1 vnt. (su PVM)
Standartas
1
€ 45,20
€ 45,20 už 1 vnt. (be PVM)
€ 54,69
€ 54,69 už 1 vnt. (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
1
| kiekis | Vieneto kaina |
|---|---|
| 1 - 49 | € 45,20 |
| 50 - 99 | € 36,90 |
| 100 - 249 | € 35,90 |
| 250 - 499 | € 35,00 |
| 500+ | € 34,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
H2PAK-7
Serija
SCT
Mount Type
Surface
Kaiščių skaičius
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Produkto Aprašymas
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
