Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
65A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
Hip-247
Serija
SCT
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.59Ω
Channel Mode
Depletion
Forward Voltage Vf
3.5V
Typical Gate Charge Qg @ Vgs
122nC
Maximum Power Dissipation Pd
318W
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
200°C
Ilgis
15.75mm
Aukštis
34.95mm
Standards/Approvals
No
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Sandėlio informacija laikinai nepasiekiama.
€ 1 125,00
€ 37,50 Each (In a Tube of 30) (be PVM)
€ 1 361,25
€ 45,375 Each (In a Tube of 30) (su PVM)
30

€ 1 125,00
€ 37,50 Each (In a Tube of 30) (be PVM)
€ 1 361,25
€ 45,375 Each (In a Tube of 30) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
30

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
65A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
Hip-247
Serija
SCT
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.59Ω
Channel Mode
Depletion
Forward Voltage Vf
3.5V
Typical Gate Charge Qg @ Vgs
122nC
Maximum Power Dissipation Pd
318W
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
200°C
Ilgis
15.75mm
Aukštis
34.95mm
Standards/Approvals
No
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.