Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
H2PAK-2
Serija
SiC MOSFET
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
203mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Maksimali darbinė temperatūra
175°C
Aukštis
10.4mm
Ilgis
15.8mm
Standards/Approvals
No
Plotis
4.7mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
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€ 12 800,00
€ 12,80 Each (On a Reel of 1000) (be PVM)
€ 15 488,00
€ 15,488 Each (On a Reel of 1000) (su PVM)
1000
€ 12 800,00
€ 12,80 Each (On a Reel of 1000) (be PVM)
€ 15 488,00
€ 15,488 Each (On a Reel of 1000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
H2PAK-2
Serija
SiC MOSFET
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
203mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Maksimali darbinė temperatūra
175°C
Aukštis
10.4mm
Ilgis
15.8mm
Standards/Approvals
No
Plotis
4.7mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
