Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
Hip-247
Serija
SCT
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
153W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
3.6V
Maksimali darbinė temperatūra
200°C
Ilgis
10.4mm
Aukštis
15.8mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
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€ 476,00
€ 476,00 1 Tube of 30 (be PVM)
€ 575,96
€ 575,96 1 Tube of 30 (su PVM)
1
€ 476,00
€ 476,00 1 Tube of 30 (be PVM)
€ 575,96
€ 575,96 1 Tube of 30 (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
Hip-247
Serija
SCT
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
153W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
3.6V
Maksimali darbinė temperatūra
200°C
Ilgis
10.4mm
Aukštis
15.8mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
