Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
Hip-247
Serija
SCT
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
150W
Minimali darbinė temperatūra
-55°C
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
4.3V
Maksimali darbinė temperatūra
200°C
Aukštis
34.95mm
Ilgis
15.75mm
Standards/Approvals
No
Plotis
5.15mm
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
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€ 297,00
€ 297,00 1 Tube of 30 (be PVM)
€ 359,37
€ 359,37 1 Tube of 30 (su PVM)
1
€ 297,00
€ 297,00 1 Tube of 30 (be PVM)
€ 359,37
€ 359,37 1 Tube of 30 (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
1200V
Pakuotės tipas
Hip-247
Serija
SCT
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
150W
Minimali darbinė temperatūra
-55°C
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
4.3V
Maksimali darbinė temperatūra
200°C
Aukštis
34.95mm
Ilgis
15.75mm
Standards/Approvals
No
Plotis
5.15mm
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
