Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N, Type P
Maximum Continuous Drain Current Id
9.7A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
QFN-9
Serija
MASTERG
Mount Type
Surface
Kaiščių skaičius
31
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
2nC
Maximum Power Dissipation Pd
40mW
Minimali darbinė temperatūra
-40°C
Maksimali darbinė temperatūra
125°C
Ilgis
9mm
Aukštis
1mm
Standards/Approvals
RoHS, ECOPACK
Plotis
9mm
Automotive Standard
No
Kilmės šalis
Thailand
Produkto Aprašymas
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
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€ 8,10
€ 8,10 už 1 vnt. (be PVM)
€ 9,80
€ 9,80 už 1 vnt. (su PVM)
Standartas
1
€ 8,10
€ 8,10 už 1 vnt. (be PVM)
€ 9,80
€ 9,80 už 1 vnt. (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N, Type P
Maximum Continuous Drain Current Id
9.7A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
QFN-9
Serija
MASTERG
Mount Type
Surface
Kaiščių skaičius
31
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
2nC
Maximum Power Dissipation Pd
40mW
Minimali darbinė temperatūra
-40°C
Maksimali darbinė temperatūra
125°C
Ilgis
9mm
Aukštis
1mm
Standards/Approvals
RoHS, ECOPACK
Plotis
9mm
Automotive Standard
No
Kilmės šalis
Thailand
Produkto Aprašymas
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
