Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N, Type P
Maximum Drain Source Voltage Vds
58V
Pakuotės tipas
TQFP-64
Serija
L98GD
Mount Type
Surface
Kaiščių skaičius
64
Minimali darbinė temperatūra
-40°C
Maximum Gate Source Voltage Vgs
20V
Maksimali darbinė temperatūra
150°C
Standards/Approvals
AEC-Q100
Plotis
1mm
Automotive Standard
AEC-Q100
Kilmės šalis
Malaysia
Produkto Aprašymas
The STMicroelectronics 8-channel MOSFET is a pre-driver configurable for low-side, high-side, Peak and hold and H-Bridge load control. It is designed to comply with the requirements of automotive passenger vehicles, as well as automotive commercial vehicles. The device offers the possibility of controlling two independent H-Bridges. The driver outputs are protected against short circuit condition, also protects the external MOS in case of an overcurrent event.
Sandėlio informacija laikinai nepasiekiama.
€ 7 500,00
€ 7,50 Each (On a Reel of 1000) (be PVM)
€ 9 075,00
€ 9,075 Each (On a Reel of 1000) (su PVM)
1000

€ 7 500,00
€ 7,50 Each (On a Reel of 1000) (be PVM)
€ 9 075,00
€ 9,075 Each (On a Reel of 1000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1000

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N, Type P
Maximum Drain Source Voltage Vds
58V
Pakuotės tipas
TQFP-64
Serija
L98GD
Mount Type
Surface
Kaiščių skaičius
64
Minimali darbinė temperatūra
-40°C
Maximum Gate Source Voltage Vgs
20V
Maksimali darbinė temperatūra
150°C
Standards/Approvals
AEC-Q100
Plotis
1mm
Automotive Standard
AEC-Q100
Kilmės šalis
Malaysia
Produkto Aprašymas
The STMicroelectronics 8-channel MOSFET is a pre-driver configurable for low-side, high-side, Peak and hold and H-Bridge load control. It is designed to comply with the requirements of automotive passenger vehicles, as well as automotive commercial vehicles. The device offers the possibility of controlling two independent H-Bridges. The driver outputs are protected against short circuit condition, also protects the external MOS in case of an overcurrent event.