Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-10A
Maximum Collector Emitter Voltage Vceo
-50V
Pakuotės tipas
SOT-89
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
1.4W
Transistor Polarity
PNP
Minimum DC Current Gain hFE
80
Maximum Emitter Base Voltage VEBO
-5V
Minimali darbinė temperatūra
-65°C
Maximum Transition Frequency ft
1MHz
Kaiščių skaičius
4
Maksimali darbinė temperatūra
150°C
Ilgis
4.6mm
Aukštis
1.6mm
Standards/Approvals
No
Plotis
2.6mm
Automotive Standard
No
Produkto Aprašymas
The 2STF2550 and 2STN2550 are PNP transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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Sandėlio informacija laikinai nepasiekiama.
€ 502,50
€ 0,201 Each (On a Reel of 2500) (be PVM)
€ 608,02
€ 0,243 Each (On a Reel of 2500) (su PVM)
2500
€ 502,50
€ 0,201 Each (On a Reel of 2500) (be PVM)
€ 608,02
€ 0,243 Each (On a Reel of 2500) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
2500
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 2500 - 2500 | € 0,201 | € 502,50 |
| 5000 - 7500 | € 0,166 | € 415,00 |
| 10000 - 22500 | € 0,157 | € 392,50 |
| 25000+ | € 0,152 | € 380,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-10A
Maximum Collector Emitter Voltage Vceo
-50V
Pakuotės tipas
SOT-89
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
1.4W
Transistor Polarity
PNP
Minimum DC Current Gain hFE
80
Maximum Emitter Base Voltage VEBO
-5V
Minimali darbinė temperatūra
-65°C
Maximum Transition Frequency ft
1MHz
Kaiščių skaičius
4
Maksimali darbinė temperatūra
150°C
Ilgis
4.6mm
Aukštis
1.6mm
Standards/Approvals
No
Plotis
2.6mm
Automotive Standard
No
Produkto Aprašymas
The 2STF2550 and 2STN2550 are PNP transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
