Techniniai dokumentai
Specifikacijos
Markė
Semikron DanfossMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Pakuotės tipas
SEMITRANS3
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Series
Matmenys
106.4 x 61.4 x 30.5mm
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-40 °C
Plotis
61.4mm
Produkto aprašymas
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 458,85
€ 458,85 už 1 vnt. (be PVM)
€ 555,21
€ 555,21 už 1 vnt. (su PVM)
1

€ 458,85
€ 458,85 už 1 vnt. (be PVM)
€ 555,21
€ 555,21 už 1 vnt. (su PVM)
1

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina |
---|---|
1 - 1 | € 458,85 |
2 - 4 | € 435,10 |
5 - 9 | € 420,85 |
10 - 19 | € 404,70 |
20+ | € 384,75 |
Techniniai dokumentai
Specifikacijos
Markė
Semikron DanfossMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Pakuotės tipas
SEMITRANS3
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Series
Matmenys
106.4 x 61.4 x 30.5mm
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-40 °C
Plotis
61.4mm
Produkto aprašymas
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.