ROHM N-Channel MOSFET, 4 A, 45 V, 6-Pin TSMT RVQ040N05TR

RS kodas: 826-7816Gamintojas: ROHMGamintojo kodas: RVQ040N05TR
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

45 V

Pakuotės tipas

TSMT

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-21 V, +21 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Plotis

1.8mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3mm

Aukštis

0.95mm

Kilmės šalis

Thailand

Produkto aprašymas

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 9,19

€ 0,613 Each (In a Pack of 15) (be PVM)

€ 11,12

€ 0,742 Each (In a Pack of 15) (su PVM)

ROHM N-Channel MOSFET, 4 A, 45 V, 6-Pin TSMT RVQ040N05TR
sticker-462

€ 9,19

€ 0,613 Each (In a Pack of 15) (be PVM)

€ 11,12

€ 0,742 Each (In a Pack of 15) (su PVM)

ROHM N-Channel MOSFET, 4 A, 45 V, 6-Pin TSMT RVQ040N05TR
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
15 - 360€ 0,613€ 9,19
375 - 735€ 0,537€ 8,05
750 - 1485€ 0,523€ 7,85
1500 - 2985€ 0,508€ 7,62
3000+€ 0,499€ 7,48

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

45 V

Pakuotės tipas

TSMT

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-21 V, +21 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Plotis

1.8mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3mm

Aukštis

0.95mm

Kilmės šalis

Thailand

Produkto aprašymas

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more