ROHM RU1C001UN N-Channel MOSFET, 100 mA, 20 V, 3-Pin SOT-323 RU1C001UNTCL

RS kodas: 124-6834Gamintojas: ROHMGamintojo kodas: RU1C001UNTCL
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-323

Serija

RU1C001UN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

18 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

-8 V, +8 V

Maksimali darbinė temperatūra

+150 °C

Number of Elements per Chip

1

Plotis

1.35mm

Ilgis

2.1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1mm

Kilmės šalis

Thailand

Produkto aprašymas

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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€ 10,05

€ 0,067 Each (In a Pack of 150) (be PVM)

€ 12,16

€ 0,081 Each (In a Pack of 150) (su PVM)

ROHM RU1C001UN N-Channel MOSFET, 100 mA, 20 V, 3-Pin SOT-323 RU1C001UNTCL
sticker-462

€ 10,05

€ 0,067 Each (In a Pack of 150) (be PVM)

€ 12,16

€ 0,081 Each (In a Pack of 150) (su PVM)

ROHM RU1C001UN N-Channel MOSFET, 100 mA, 20 V, 3-Pin SOT-323 RU1C001UNTCL

Sandėlio informacija laikinai nepasiekiama.

sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-323

Serija

RU1C001UN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

18 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

-8 V, +8 V

Maksimali darbinė temperatūra

+150 °C

Number of Elements per Chip

1

Plotis

1.35mm

Ilgis

2.1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1mm

Kilmės šalis

Thailand

Produkto aprašymas

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more