onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS1D3N04CTWG

RS kodas: 185-9246Gamintojas: onsemiGamintojo kodas: NVMYS1D3N04CTWG
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

252 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

1.15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

134 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

4.25mm

Ilgis

5mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.2mm

Automotive Standard

AEC-Q101

Kilmės šalis

Philippines

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Sandėlio informacija laikinai nepasiekiama.

€ 3,52

€ 0,881 Each (In a Pack of 4) (be PVM)

€ 4,26

€ 1,066 Each (In a Pack of 4) (su PVM)

onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS1D3N04CTWG
Pasirinkite pakuotės tipą
sticker-462

€ 3,52

€ 0,881 Each (In a Pack of 4) (be PVM)

€ 4,26

€ 1,066 Each (In a Pack of 4) (su PVM)

onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS1D3N04CTWG
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

252 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

1.15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

134 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

4.25mm

Ilgis

5mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.2mm

Automotive Standard

AEC-Q101

Kilmės šalis

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more