onsemi NVMFD5C470NL Dual N-Channel MOSFET, 36 A, 40 V, 8-Pin DFN NVMFD5C470NLT1G

RS kodas: 172-3319Gamintojas: onsemiGamintojo kodas: NVMFD5C470NLT1G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

DFN

Serija

NVMFD5C470NL

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

17.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

24 W

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

9 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Number of Elements per Chip

2

Plotis

5.1mm

Ilgis

6.1mm

Automotive Standard

AEC-Q101

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.05mm

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Sandėlio informacija laikinai nepasiekiama.

€ 1 285,35

€ 0,857 Each (On a Reel of 1500) (be PVM)

€ 1 555,27

€ 1,037 Each (On a Reel of 1500) (su PVM)

onsemi NVMFD5C470NL Dual N-Channel MOSFET, 36 A, 40 V, 8-Pin DFN NVMFD5C470NLT1G
sticker-462

€ 1 285,35

€ 0,857 Each (On a Reel of 1500) (be PVM)

€ 1 555,27

€ 1,037 Each (On a Reel of 1500) (su PVM)

onsemi NVMFD5C470NL Dual N-Channel MOSFET, 36 A, 40 V, 8-Pin DFN NVMFD5C470NLT1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

DFN

Serija

NVMFD5C470NL

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

17.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

24 W

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

9 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Number of Elements per Chip

2

Plotis

5.1mm

Ilgis

6.1mm

Automotive Standard

AEC-Q101

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.05mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more