onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Plotis
1.4mm
Minimali darbinė temperatūra
-55 °C
Aukštis
1.01mm
Produkto aprašymas
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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€ 8,60
€ 0,086 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 10,41
€ 0,104 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
100
€ 8,60
€ 0,086 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 10,41
€ 0,104 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Ritė)
100
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 100 - 200 | € 0,086 | € 4,30 |
| 250 - 450 | € 0,083 | € 4,15 |
| 500 - 950 | € 0,08 | € 4,00 |
| 1000+ | € 0,076 | € 3,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Plotis
1.4mm
Minimali darbinė temperatūra
-55 °C
Aukštis
1.01mm
Produkto aprašymas
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products