onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F

RS kodas: 178-4258Gamintojas: onsemiGamintojo kodas: NTPF082N65S3F
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Plotis

4.9mm

Ilgis

10.63mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Aukštis

16.12mm

Kilmės šalis

China

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Sandėlio informacija laikinai nepasiekiama.

€ 266,00

€ 5,32 Each (In a Tube of 50) (be PVM)

€ 321,86

€ 6,437 Each (In a Tube of 50) (su PVM)

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F
sticker-462

€ 266,00

€ 5,32 Each (In a Tube of 50) (be PVM)

€ 321,86

€ 6,437 Each (In a Tube of 50) (su PVM)

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 5,32€ 266,00
100+€ 5,13€ 256,50

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Galbūt jus domina

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Plotis

4.9mm

Ilgis

10.63mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Aukštis

16.12mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina