onsemi N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK NTD5867NLT4G

RS kodas: 719-2901Gamintojas: onsemiGamintojo kodas: NTD5867NLT4G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Plotis

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.73mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

2.38mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 4,27

€ 0,854 Each (In a Pack of 5) (be PVM)

€ 5,17

€ 1,033 Each (In a Pack of 5) (su PVM)

onsemi N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK NTD5867NLT4G
Pasirinkite pakuotės tipą
sticker-462

€ 4,27

€ 0,854 Each (In a Pack of 5) (be PVM)

€ 5,17

€ 1,033 Each (In a Pack of 5) (su PVM)

onsemi N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK NTD5867NLT4G
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
5 - 45€ 0,854€ 4,27
50 - 95€ 0,736€ 3,68
100 - 495€ 0,638€ 3,19
500 - 995€ 0,56€ 2,80
1000+€ 0,51€ 2,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Plotis

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.73mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

2.38mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more