Techniniai Dokumentai
Specifikacijos
Markė
onsemiProduct Type
Optocoupler
Mount Type
Through Hole
Maximum Forward Voltage
1.3V
Number of Channels
2
Packaging
Tube
Number of Pins
8
Pakuotės tipas
PDIP
Input Current Type
DC
Typical Rise Time
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Minimali darbinė temperatūra
-55°C
Maximum Current Transfer Ratio
6%
Maksimali darbinė temperatūra
100°C
Typical Fall Time
2.4μs
Minimum Current Transfer Ratio
0.5%
Standards/Approvals
EN, IEC, UL
Serija
MCT
Automotive Standard
No
Produkto Aprašymas
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
Sandėlio informacija laikinai nepasiekiama.
€ 26,85
€ 0,537 Each (In a Tube of 50) (be PVM)
€ 32,49
€ 0,65 Each (In a Tube of 50) (su PVM)
50
€ 26,85
€ 0,537 Each (In a Tube of 50) (be PVM)
€ 32,49
€ 0,65 Each (In a Tube of 50) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
50
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 0,537 | € 26,85 |
| 100 - 950 | € 0,315 | € 15,75 |
| 1000 - 1950 | € 0,307 | € 15,35 |
| 2000 - 9950 | € 0,299 | € 14,95 |
| 10000+ | € 0,292 | € 14,60 |
Techniniai Dokumentai
Specifikacijos
Markė
onsemiProduct Type
Optocoupler
Mount Type
Through Hole
Maximum Forward Voltage
1.3V
Number of Channels
2
Packaging
Tube
Number of Pins
8
Pakuotės tipas
PDIP
Input Current Type
DC
Typical Rise Time
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Minimali darbinė temperatūra
-55°C
Maximum Current Transfer Ratio
6%
Maksimali darbinė temperatūra
100°C
Typical Fall Time
2.4μs
Minimum Current Transfer Ratio
0.5%
Standards/Approvals
EN, IEC, UL
Serija
MCT
Automotive Standard
No
Produkto Aprašymas
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
