Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
8, 15
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
9.9 x 4.5 x 9.2mm
Produkto aprašymas
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
€ 66,50
€ 1,33 Each (In a Tube of 50) (be PVM)
€ 80,46
€ 1,609 Each (In a Tube of 50) (su PVM)
50

€ 66,50
€ 1,33 Each (In a Tube of 50) (be PVM)
€ 80,46
€ 1,609 Each (In a Tube of 50) (su PVM)
50

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
50 - 50 | € 1,33 | € 66,50 |
100+ | € 0,998 | € 49,88 |
Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
8, 15
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
9.9 x 4.5 x 9.2mm
Produkto aprašymas
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.