onsemi PowerTrench Dual N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 FDC6401N

RS kodas: 809-0852Gamintojas: onsemiGamintojo kodas: FDC6401N
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

20 V

Serija

PowerTrench

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

106 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Ilgis

3mm

Typical Gate Charge @ Vgs

3.3 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Plotis

1.7mm

Transistor Material

Si

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Sandėlio informacija laikinai nepasiekiama.

€ 11,40

€ 0,57 Už kiekviena vnt. (tiekiama juostoje) (be PVM)

€ 13,79

€ 0,69 Už kiekviena vnt. (tiekiama juostoje) (su PVM)

onsemi PowerTrench Dual N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 FDC6401N
Pasirinkite pakuotės tipą
sticker-462

€ 11,40

€ 0,57 Už kiekviena vnt. (tiekiama juostoje) (be PVM)

€ 13,79

€ 0,69 Už kiekviena vnt. (tiekiama juostoje) (su PVM)

onsemi PowerTrench Dual N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 FDC6401N
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Juosta
20 - 180€ 0,57€ 11,40
200 - 480€ 0,492€ 9,84
500 - 980€ 0,428€ 8,55
1000 - 1980€ 0,374€ 7,49
2000+€ 0,34€ 6,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

20 V

Serija

PowerTrench

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

106 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Ilgis

3mm

Typical Gate Charge @ Vgs

3.3 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Plotis

1.7mm

Transistor Material

Si

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more