Nexperia N-Channel MOSFET, 16.7 A, 60 V, 4-Pin LFPAK, SOT-669 BUK9Y59-60E,115

RS kodas: 170-5446Gamintojas: NexperiaGamintojo kodas: BUK9Y59-60E,115
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

16.7 A

Maximum Drain Source Voltage

60 V

Serija

BUK9Y59

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

133 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.45V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

10 V

Plotis

4.1mm

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

6.1 nC @ 5 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Automotive Standard

AEC-Q101

Kilmės šalis

Philippines

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€ 7,96

€ 0,318 Each (In a Pack of 25) (be PVM)

€ 9,63

€ 0,385 Each (In a Pack of 25) (su PVM)

Nexperia N-Channel MOSFET, 16.7 A, 60 V, 4-Pin LFPAK, SOT-669 BUK9Y59-60E,115
Pasirinkite pakuotės tipą
sticker-462

€ 7,96

€ 0,318 Each (In a Pack of 25) (be PVM)

€ 9,63

€ 0,385 Each (In a Pack of 25) (su PVM)

Nexperia N-Channel MOSFET, 16.7 A, 60 V, 4-Pin LFPAK, SOT-669 BUK9Y59-60E,115
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

16.7 A

Maximum Drain Source Voltage

60 V

Serija

BUK9Y59

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

133 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.45V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

10 V

Plotis

4.1mm

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

6.1 nC @ 5 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Automotive Standard

AEC-Q101

Kilmės šalis

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more