Nexperia N-Channel MOSFET, 1.05 A, 20 V, 3-Pin SOT-23 BSH105,215

RS kodas: 124-2286Gamintojas: NexperiaGamintojo kodas: BSH105,215
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

1.05 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Plotis

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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Sandėlio informacija laikinai nepasiekiama.

€ 313,50

€ 0,104 Each (On a Reel of 3000) (be PVM)

€ 379,34

€ 0,126 Each (On a Reel of 3000) (su PVM)

Nexperia N-Channel MOSFET, 1.05 A, 20 V, 3-Pin SOT-23 BSH105,215
sticker-462

€ 313,50

€ 0,104 Each (On a Reel of 3000) (be PVM)

€ 379,34

€ 0,126 Each (On a Reel of 3000) (su PVM)

Nexperia N-Channel MOSFET, 1.05 A, 20 V, 3-Pin SOT-23 BSH105,215
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

1.05 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Plotis

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more