Microchip VN10K N-Channel MOSFET, 310 mA, 60 V, 3-Pin TO-92 VN10KN3-G

RS kodas: 177-9706Gamintojas: MicrochipGamintojo kodas: VN10KN3-GDistrelec Article No.: 30302170
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Microchip

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Serija

VN10K

Pakuotės tipas

TO-92

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Number of Elements per Chip

1

Plotis

4.06mm

Ilgis

5.08mm

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.8V

Aukštis

5.33mm

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€ 444,00

€ 0,444 Each (In a Bag of 1000) (be PVM)

€ 537,24

€ 0,537 Each (In a Bag of 1000) (su PVM)

Microchip VN10K N-Channel MOSFET, 310 mA, 60 V, 3-Pin TO-92 VN10KN3-G
sticker-462

€ 444,00

€ 0,444 Each (In a Bag of 1000) (be PVM)

€ 537,24

€ 0,537 Each (In a Bag of 1000) (su PVM)

Microchip VN10K N-Channel MOSFET, 310 mA, 60 V, 3-Pin TO-92 VN10KN3-G

Sandėlio informacija laikinai nepasiekiama.

sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Microchip

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Serija

VN10K

Pakuotės tipas

TO-92

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Number of Elements per Chip

1

Plotis

4.06mm

Ilgis

5.08mm

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.8V

Aukštis

5.33mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more