Microchip Half Bridge mSiC N-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330DUM07D3NG

Markė

Product Type

SiC Power Module

Channel Type

N

Maximum Continuous Drain Current Id

295A

Maximum Drain Source Voltage Vds

3300V

Serija

mSiC

Mount Type

Heatsink

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

1918W

Minimali darbinė temperatūra

-40°C

Maksimali darbinė temperatūra

175°C

Transistor Configuration

Half Bridge

Standards/Approvals

RoHS

Automotive Standard

No