Techniniai Dokumentai
Specifikacijos
Markė
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
295A
Maximum Drain Source Voltage Vds
3300V
Serija
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
1918W
Minimali darbinė temperatūra
-40°C
Maksimali darbinė temperatūra
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Produkto Aprašymas
The Microchip silicon carbide power module combines dual common source functionality with high voltage capabilities, designed for efficient operation and superior performance in demanding applications.
Sandėlio informacija laikinai nepasiekiama.
€ 1 170,00
€ 1 170,00 už 1 vnt. (be PVM)
€ 1 415,70
€ 1 415,70 už 1 vnt. (su PVM)
1
€ 1 170,00
€ 1 170,00 už 1 vnt. (be PVM)
€ 1 415,70
€ 1 415,70 už 1 vnt. (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1
Techniniai Dokumentai
Specifikacijos
Markė
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
295A
Maximum Drain Source Voltage Vds
3300V
Serija
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
1918W
Minimali darbinė temperatūra
-40°C
Maksimali darbinė temperatūra
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Produkto Aprašymas
The Microchip silicon carbide power module combines dual common source functionality with high voltage capabilities, designed for efficient operation and superior performance in demanding applications.