Techniniai Dokumentai
Specifikacijos
Markė
MicrochipProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
12V
Pakuotės tipas
TO-247
Serija
MSC035SMA070B4
Mount Type
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance Rds
8Ω
Typical Gate Charge Qg @ Vgs
99nC
Maximum Power Dissipation Pd
1.6W
Minimali darbinė temperatūra
-55°C
Maximum Gate Source Voltage Vgs
2V
Forward Voltage Vf
1.8V
Maksimali darbinė temperatūra
175°C
Standards/Approvals
RoHS
Automotive Standard
No
Produkto Aprašymas
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Sandėlio informacija laikinai nepasiekiama.
€ 312,00
€ 10,40 Each (In a Tube of 30) (be PVM)
€ 377,52
€ 12,584 Each (In a Tube of 30) (su PVM)
30

€ 312,00
€ 10,40 Each (In a Tube of 30) (be PVM)
€ 377,52
€ 12,584 Each (In a Tube of 30) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
30

Techniniai Dokumentai
Specifikacijos
Markė
MicrochipProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
12V
Pakuotės tipas
TO-247
Serija
MSC035SMA070B4
Mount Type
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance Rds
8Ω
Typical Gate Charge Qg @ Vgs
99nC
Maximum Power Dissipation Pd
1.6W
Minimali darbinė temperatūra
-55°C
Maximum Gate Source Voltage Vgs
2V
Forward Voltage Vf
1.8V
Maksimali darbinė temperatūra
175°C
Standards/Approvals
RoHS
Automotive Standard
No
Produkto Aprašymas
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.