Techniniai Dokumentai
Specifikacijos
Markė
MicrochipMemory Size
64kB
Product Type
Parallel EEPROM
Interface Type
Parallel
Pakuotės tipas
PLCC
Mount Type
Surface
Kaiščių skaičius
32
Maximum Clock Frequency
5MHz
Organisation
8K x 8 bit
Minimum Supply Voltage
4.5V
Number of Bits per Word
8
Maximum Supply Voltage
5.5V
Minimali darbinė temperatūra
-40°C
Maksimali darbinė temperatūra
85°C
Ilgis
12.5mm
Standards/Approvals
No
Plotis
15mm
Serija
AT28HC64B
Data Retention
10year
Supply Current
40mA
Maximum Random Access Time
70ns
Automotive Standard
No
Number of Words
8192
Produkto Aprašymas
The Microchip AT28HC64B is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Sandėlio informacija laikinai nepasiekiama.
€ 259,20
€ 8,10 Each (In a Tube of 32) (be PVM)
€ 313,63
€ 9,801 Each (In a Tube of 32) (su PVM)
32

€ 259,20
€ 8,10 Each (In a Tube of 32) (be PVM)
€ 313,63
€ 9,801 Each (In a Tube of 32) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
32

Techniniai Dokumentai
Specifikacijos
Markė
MicrochipMemory Size
64kB
Product Type
Parallel EEPROM
Interface Type
Parallel
Pakuotės tipas
PLCC
Mount Type
Surface
Kaiščių skaičius
32
Maximum Clock Frequency
5MHz
Organisation
8K x 8 bit
Minimum Supply Voltage
4.5V
Number of Bits per Word
8
Maximum Supply Voltage
5.5V
Minimali darbinė temperatūra
-40°C
Maksimali darbinė temperatūra
85°C
Ilgis
12.5mm
Standards/Approvals
No
Plotis
15mm
Serija
AT28HC64B
Data Retention
10year
Supply Current
40mA
Maximum Random Access Time
70ns
Automotive Standard
No
Number of Words
8192
Produkto Aprašymas
The Microchip AT28HC64B is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.