IXYS GigaMOS, HiperFET N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
500 A
Maximum Drain Source Voltage
75 V
Pakuotės tipas
SMPD
Serija
GigaMOS, HiperFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
24
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Ilgis
25.25mm
Typical Gate Charge @ Vgs
545 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Plotis
23.25mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.25V
Aukštis
5.7mm
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 452,20
€ 22,61 Each (In a Tube of 20) (be PVM)
€ 547,16
€ 27,358 Each (In a Tube of 20) (su PVM)
20
€ 452,20
€ 22,61 Each (In a Tube of 20) (be PVM)
€ 547,16
€ 27,358 Each (In a Tube of 20) (su PVM)
20
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
500 A
Maximum Drain Source Voltage
75 V
Pakuotės tipas
SMPD
Serija
GigaMOS, HiperFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
24
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Ilgis
25.25mm
Typical Gate Charge @ Vgs
545 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Plotis
23.25mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.25V
Aukštis
5.7mm
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products