IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

RS kodas: 168-4412Gamintojas: IXYSGamintojo kodas: IXGH30N120B3D1
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Žiūrėti viską Izoliuotų užtvarų bipoliniai tranzistoriai

Techniniai dokumentai

Specifikacijos

Markė

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Transistor Configuration

Single

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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€ 316,35

€ 10,545 Each (In a Tube of 30) (be PVM)

€ 382,78

€ 12,759 Each (In a Tube of 30) (su PVM)

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

30

Galima įsigyti kartotiną kiekį 30
30€ 316,35
60€ 632,70
90€ 949,05
120€ 1 265,40
150€ 1 581,75
180€ 1 898,10
210€ 2 214,45
240€ 2 530,80
270€ 2 847,15
300€ 3 163,50
330€ 3 479,85
360€ 3 796,20
390€ 4 112,55
420€ 4 428,90
450€ 4 745,25
sticker-462

€ 316,35

€ 10,545 Each (In a Tube of 30) (be PVM)

€ 382,78

€ 12,759 Each (In a Tube of 30) (su PVM)

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Sandėlio informacija laikinai nepasiekiama.

30

Galima įsigyti kartotiną kiekį 30
30€ 316,35
60€ 632,70
90€ 949,05
120€ 1 265,40
150€ 1 581,75
180€ 1 898,10
210€ 2 214,45
240€ 2 530,80
270€ 2 847,15
300€ 3 163,50
330€ 3 479,85
360€ 3 796,20
390€ 4 112,55
420€ 4 428,90
450€ 4 745,25
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Transistor Configuration

Single

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more