IXYS HiperFET, Polar N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXFN48N60P
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Serija
HiperFET, Polar
Pakuotės tipas
SOT-227
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
25.42mm
Transistor Material
Si
Ilgis
38.23mm
Typical Gate Charge @ Vgs
150 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Aukštis
9.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 286,90
€ 28,69 Each (In a Tube of 10) (be PVM)
€ 347,15
€ 34,715 Each (In a Tube of 10) (su PVM)
10
€ 286,90
€ 28,69 Each (In a Tube of 10) (be PVM)
€ 347,15
€ 34,715 Each (In a Tube of 10) (su PVM)
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Serija
HiperFET, Polar
Pakuotės tipas
SOT-227
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
25.42mm
Transistor Material
Si
Ilgis
38.23mm
Typical Gate Charge @ Vgs
150 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Aukštis
9.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products