IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
96 A
Maximum Drain Source Voltage
200 V
Pakuotės tipas
TO-247
Serija
HiperFET, Polar
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
600 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Ilgis
16.26mm
Maksimali darbinė temperatūra
+175 °C
Typical Gate Charge @ Vgs
145 nC @ 10 V
Plotis
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
21.46mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 10,07
€ 10,07 už 1 vnt. (be PVM)
€ 12,18
€ 12,18 už 1 vnt. (su PVM)
Standartas
1
€ 10,07
€ 10,07 už 1 vnt. (be PVM)
€ 12,18
€ 12,18 už 1 vnt. (su PVM)
Standartas
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 1 - 4 | € 10,07 |
| 5 - 19 | € 9,31 |
| 20 - 49 | € 8,74 |
| 50 - 99 | € 7,50 |
| 100+ | € 7,12 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
96 A
Maximum Drain Source Voltage
200 V
Pakuotės tipas
TO-247
Serija
HiperFET, Polar
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
600 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Ilgis
16.26mm
Maksimali darbinė temperatūra
+175 °C
Typical Gate Charge @ Vgs
145 nC @ 10 V
Plotis
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
21.46mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products