IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXFH170N10P
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
170 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-247
Serija
HiperFET, Polar
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
714 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Ilgis
16.26mm
Typical Gate Charge @ Vgs
198 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Number of Elements per Chip
1
Plotis
5.3mm
Aukštis
21.46mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 350,55
€ 11,685 Each (In a Tube of 30) (be PVM)
€ 424,17
€ 14,139 Each (In a Tube of 30) (su PVM)
30
€ 350,55
€ 11,685 Each (In a Tube of 30) (be PVM)
€ 424,17
€ 14,139 Each (In a Tube of 30) (su PVM)
30
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
170 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-247
Serija
HiperFET, Polar
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
714 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Ilgis
16.26mm
Typical Gate Charge @ Vgs
198 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Number of Elements per Chip
1
Plotis
5.3mm
Aukštis
21.46mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products