N-Channel MOSFET Transistor, 57 A, 100 V, 3-Pin TO-220AB International Rectifier IRF3710PBF
Techniniai dokumentai
Specifikacijos
Channel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
130 nC @ 10 V
Number of Elements per Chip
1
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.54mm
Plotis
4.69mm
Serija
HEXFET
Minimali darbinė temperatūra
-55 °C
Aukštis
8.77mm
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P.O.A.
1
P.O.A.
1
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Patikrinkite dar kartą.
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Techniniai dokumentai
Specifikacijos
Channel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
130 nC @ 10 V
Number of Elements per Chip
1
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.54mm
Plotis
4.69mm
Serija
HEXFET
Minimali darbinė temperatūra
-55 °C
Aukštis
8.77mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products