Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Serija
HEXFET
Pakuotės tipas
TO-247AC
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
370 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Plotis
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
15.87mm
Maksimali darbinė temperatūra
+175 °C
Aukštis
20.7mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 83,60
€ 4,18 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 101,16
€ 5,058 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
20

€ 83,60
€ 4,18 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 101,16
€ 5,058 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
20

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
20 - 48 | € 4,18 | € 8,36 |
50 - 98 | € 3,895 | € 7,79 |
100 - 198 | € 3,658 | € 7,32 |
200+ | € 3,372 | € 6,74 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Serija
HEXFET
Pakuotės tipas
TO-247AC
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
370 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Plotis
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
15.87mm
Maksimali darbinė temperatūra
+175 °C
Aukštis
20.7mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.