Infineon HEXFET N-Channel MOSFET, 100 A, 25 V, 8-Pin PQFN 5 x 6 IRFH5250DTRPBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Serija
HEXFET
Pakuotės tipas
PQFN 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.35V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
156 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
5mm
Ilgis
6mm
Typical Gate Charge @ Vgs
83 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Aukštis
0.85mm
Produkto aprašymas
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 43,94
€ 1,758 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 53,17
€ 2,127 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
25
€ 43,94
€ 1,758 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 53,17
€ 2,127 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
25
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 25 - 45 | € 1,758 | € 8,79 |
| 50 - 120 | € 1,662 | € 8,31 |
| 125 - 245 | € 1,568 | € 7,84 |
| 250+ | € 1,52 | € 7,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Serija
HEXFET
Pakuotės tipas
PQFN 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.35V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
156 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
5mm
Ilgis
6mm
Typical Gate Charge @ Vgs
83 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Aukštis
0.85mm
Produkto aprašymas
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products