P-Channel MOSFET, 16 A, 30 V, 8-Pin SOIC Infineon IRF9317PBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.99mm
Transistor Material
Si
Typical Gate Charge @ Vgs
31 nC @ 4.5 V, 61 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
4.98mm
Serija
HEXFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.57mm
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€ 20,95
€ 0,419 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 25,35
€ 0,507 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
50
€ 20,95
€ 0,419 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 25,35
€ 0,507 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Vamzdelis)
50
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 90 | € 0,419 | € 4,19 |
| 100 - 190 | € 0,376 | € 3,76 |
| 200 - 490 | € 0,331 | € 3,31 |
| 500+ | € 0,298 | € 2,98 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.99mm
Transistor Material
Si
Typical Gate Charge @ Vgs
31 nC @ 4.5 V, 61 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
4.98mm
Serija
HEXFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.57mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products